Hydroxyapatite Formation on CaTiO<SUB>3</SUB> Film Prepared by Metal-Organic Chemical Vapor Deposition
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Suppressing Nucleation in Metal-Organic Chemical Vapor Deposition of MoS2 Monolayers by Alkali Metal Halides.
Toward the large-area deposition of MoS2 layers, we employ metal-organic precursors of Mo and S for a facile and reproducible van der Waals epitaxy on c-plane sapphire. Exposing c-sapphire substrates to alkali metal halide salts such as KI or NaCl together with the Mo precursor prior to the start of the growth process results in increasing the lateral dimensions of single crystalline domains by...
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Undoped and Ta-doped SnO2 (Sn12xTaxO2) thin films were prepared on Corning 7059 glass substrates by the metal–organic chemical-vapor deposition method. The relative amount of Ta, CTa5XTa /(XTa1XSn), varied from 0 to 7.13 at. %. For the five compositions studied, the lowest resistivity at room temperature was 2.01310 V cm at CTa53.75% with charge carrier density and mobility of 1.27310 cm and 24...
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Influence of sapphire pretreatment conditions on crystalline quality of AlN epilayers has been investigated by metal organic chemical vapor deposition (MOCVD). Compared to alumination treatment, it is found that appropriate sapphire nitridation significantly straightens the surface atomic terraces and decreases the X-ray diffraction (0002) full width at half maximum (FWHM) to a minimum of 55 ar...
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We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony (TMSb) are used. We first use relatively low TMGa and TMSb flow rates to preserve th...
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The epitaxial growth of GaAs nanowires (NWs) on GaAs(111)B substrates by metal-organic chemical vapor deposition has been systematically investigated as a function of relevant growth parameters, namely, temperature, arsine (AsH3) and trimethyl-gallium (TMGa) flow rates, growth time, and gold nanoparticle catalyst size. When growing in excess As conditions (V/III molar ratios greater than four),...
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ژورنال
عنوان ژورنال: MATERIALS TRANSACTIONS
سال: 2007
ISSN: 1345-9678,1347-5320
DOI: 10.2320/matertrans.mra2007016